DIODES INC FZT851 Bipolar (BJT) Single Transistor, NPN, 60 V, 130 MHz, 3 W, 6 A, 200 hFE Magnetic Sensors which reduce bandwidth and storage

which reduce bandwidth and storage requirements without compromising image quality

8" / 20 mm Diameter Approx

Frequency Response 85 Hz - 20 kHz RMS Power Output 10 W Maximum Power 15 W Impedance 8

For 48-53mm Objective Lenses

DIODES INC FZT851 Bipolar (BJT) Single Transistor, NPN, 60 V, 130 MHz, 3 W, 6 A, 200 hFE Magnetic Sensors which reduce bandwidth and storageThe FZT851 is a NPN medium Power Transistor with matte tin plated terminals, UL94V 0 flame rated moulded plastic case, solderable terminals as per MIL STD 202, method 208 standard. Complement to FZT951 Level 1 per J STD 020 moisture sensitivity Green product AEC Q101 Qualified PPAP capable Applications Automotive Product details Power Dissipation Pd 3W DC Collector Current 6A Collector Emitter Voltage V(br)ceo 60V Transition Frequency ft 130MHz